Prof. Dr. Stefan Altmeyer
Faculty of Information, Media and Electrical Engineering
Institute of Applied Optics and Electronics

Campus Deutz
Betzdorfer Straße 2
50679 Köln
Room ZW-09-09
Mailing address
+49 221-8275-2523
stefan.altmeyer@th-koeln.de
Positions
- Lab supervisor
- Member of the Senate
Publications
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Characterization of diffractive bifocal intraocular lenses
Damian Mendroch, Stefan Altmeyer and Uwe Oberheide, Springer Nature, Scientific Reports 13 (908), (2023)
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Purely spectrometric method to measure the bias refractive index including its dispersion and the swelling or shrinking of holographic materials
S. Altmeyer, J. Matrisch, N. Bauer, and M. Frensch,, J. Opt. Soc. Am. B, 39, (2), (2022), p. 444
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Mechano-optical modulator based on a rotating optical at applied to simultaneous holographic multiplexing of gratings
Jan Matrisch, Stefan Altmeyer, Appl. Optics, 57, (2), (2018), p. 334
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Fringe visibility degeneration utilizing a rotating optical at for holographic multiplexing purposes
Jan Matrisch, Johannes Seela, Stefan Altmeyer, J. Opt. Soc. Am. A, 33, (10), (2016), p. 2081
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Refractive index determination of transparent samples by noniterative phase retrieval
J. Frank, J. Matrisch, J. Horstmann, S. Altmeyer, G. Wernicke, Appl. Optics, 50, (4), (2011), p. 427
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Non-interferometric, non-iterative phase retrieval by Green's functions
J. Frank, S. Altmeyer, G. Wernicke, J. Opt. Soc. Am. A, 27, (10) (2010), p. 2244
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Observation of gelation process and particle distribution during sol-gel synthesis by Particle Image Velocimetry
J. Krause, S. Lisinski, L. Ratke, D. Schaniel, C. Willert, S. Altmeyer, Th. Woike, M. Voges, J. Klinner, J. Sol-Gel Sci. Technol, 45 (2008), p. 73
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Innovationen durch Femtosekunden-Laser
S. Altmeyer, H. Eickenbusch, Physikalische Blätter 56 (6) (2000), p. 59
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Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material
T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B. Spangenberg, H. Kurz, R. Neumann, K. Brunner, and G. Abstreiter, Japanese Journal of Applied Physics 38 part 1 (1B), (1999), p. 465
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Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films
T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B.Spangenberg, H. Kurz, R. Neumann, K. Brunner and G. Abstreiter, Journal of Vacuum Science and Technology B 16 (6), (1998), p. 3804
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Fabrication of Silicon and Metal Nanowires and Dots Using Atomic Force Lithography
S. Hu, A. Hamidi, S. Altmeyer, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (5), (1998), p. 2822
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Potential and Challenges of Single Electron Devices
S. Altmeyer, K. Hofmann, A. Hamidi, S. Hu, B. Spangenberg, and H. Kurz, Vacuum 51 (2), (1998), p. 295
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Novel Approach to Atomic Force Lithography
S. Hu, S. Altmeyer, A. Hamidi, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (4), (1998), p. 1983
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On the influence of rare earth doping on microstructure and phase composition of sputtered, epitaxial Bi_2 Sr_2 [ Ca_(x-1) RE_x ] Cu_2 O_(8+d) films and multilayers
A.C. Meltzow, S. Altmeyer and H. Kurz, N.D. Zakharov, S. Senz and D. Hesse, Physica C 302, (1998), p. 207
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MOS-Compatible Fabrication and Characterization of Tunnel Junctions in BESOI Material
T. Köster, B. Hadam, F. Goldschmidtböing, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Microelectronic Engineering 41/42 (ix-xix), (1998), p. 531
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Metal-oxide-semiconductor compatible silicon based single electron transistor using bonded and etched back silicon on insulator material
T. Köster, B. Hadam, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 15 (6), (1997), p. 2836
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77 K Single-Electron Transistors Fabricated with 0.1 mum Technology
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Applied Physics (Communications), 81 (12), (1997), p. 8818
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Metal-Based Single-Electron Transistors Operating at Several Kelvin
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 14 (6), (1996), p. 4034
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A Possible Road to 77 K Single-Electron Devices
S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Semiconductor Science and Technology 11, (1996), p. 1502
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Step Edge Cut Off - A New Fabrication Scheme for Metal-Based Single-Electron Devices
S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Microelectronic Engineering 30 (1-4), (1996), p. 399
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A New Concept for the Design and Realization of Metal-Based Single-Electron Devices, Step Edge Cut Off
S. Altmeyer, B. Spangenberg, and H. Kurz, Applied Physics Letters 67 (4), (1995), p. 569
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Verbundscheibe für ein holografisches Head-Up-Display
A. Gomer, J. Hagen, D. Krekel, S. Altmeyer, WO 2021 / 233713
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Volumenhologramm zur Lichtlenkung und Verfahren zu dessen Herstellung
S. Altmeyer, DE10 2015 007 770
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Verfahren zur Herstellung eines Hologramms
S. Altmeyer, R. Hammoud, J. Matrisch, DE10 2014 017 562
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Anzeigeeinrichtung, transparentes Abbildungselement sowie Verfahren zur Herstellung eines transparenten Abbildungselementes
S. Altmeyer, G. Abbati, S. Zozgornik, S. Henze, WO 2010 / 026032
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Verschattungselement sowie Verfahren zu dessen Herstellung
S. Altmeyer, S. Mebben, S. Zozgornik, DE 10 2006 050 119
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SECO Verfahren
S. Altmeyer, B. Spangenberg und H. Kurz, WO 96 / 16448
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Rotating optical flat for simultaneous holographic multiplexing
Jan Matrisch, Stefan Altmeyer, Proceedings der 118. Jahrestagung der DGAO 2017
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Multiplexing of transmission holograms in photopolymer
S. Altmeyer, Y. Hu, P. Thiee, J. Matrisch, M. Wallentin and J. Silbermann, Proceedings der 114. Jahrestagung der DGAO 2013
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Quantitative determination of the optical properties of phase objects by using a real-time phase retrieval technique
J. Frank, G.Wernicke, J. Matrisch, S.Wette, J. Beneke and S. Altmeyer, Proc. SPIE 8082, 80820N (2011), Publisher: SPIE
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Quantitative Phasenrekonstruktion in Echtzeit unter Verwendung der Intensitats-Transport-Gleichung
J. Frank, J. Matrisch, J. Beneke, S. Wette, S. Altmeyer und G. Wernicke, Proceedings der 112. Jahrestagung der DGAO 2011
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GPU-based Real-time Phase Microscopy
J. Frank, S.Wette, J. Beneke and S. Altmeyer, OSA Technical Digest (CD) (Optical Society of America, 2011), paper NTuB5, Publisher: Proc. SPIE 8082, 80820N (2011)
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Polarization-independent isolation of high power laser radiation
M. Daniels, K. Nicklaus, H.-D. Hoffmann, S. Altmeyer, Proceedings of the Third International WLT-Conference on Lasers in Manufacturing 2005, p.747, Publisher: Eckhard Beyer
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Single Electron Tunneling in Metallic Nanostructures at Kelvin Temperatures
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Quantum Devices and Circuits, Imperial College Press, (1996), p.~160, Publisher: ed. K.~Ismail, S.~Bandyopadhyay, and J.~P.~Leburton
Other information
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