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Prof. Dr. Stefan Altmeyer

Faculty of Information, Media and Electrical Engineering

Institute of Applied Optics and Electronics

Prof. Dr. Stefan Altmeyer

Campus Deutz
Betzdorfer Straße 2
50679 Köln
Room ZW-09-09 Mailing address


  • Phone: +49 221-8275-2523

Positions

  • Lab supervisor
  • Member of the Senate
  • Characterization of diffractive bifocal intraocular lenses
    Damian Mendroch, Stefan Altmeyer and Uwe Oberheide, Springer Nature, Scientific Reports 13 (908), (2023)
    https://www.nature.com/articles/s41598-023-27521-7
  • Purely spectrometric method to measure the bias refractive index including its dispersion and the swelling or shrinking of holographic materials
    S. Altmeyer, J. Matrisch, N. Bauer, and M. Frensch,, J. Opt. Soc. Am. B, 39, (2), (2022), p. 444
    https://doi.org/10.1364/JOSAB.443976
  • Mechano-optical modulator based on a rotating optical at applied to simultaneous holographic multiplexing of gratings
    Jan Matrisch, Stefan Altmeyer, Appl. Optics, 57, (2), (2018), p. 334
    https://doi.org/10.1364/AO.57.000334
  • Fringe visibility degeneration utilizing a rotating optical at for holographic multiplexing purposes
    Jan Matrisch, Johannes Seela, Stefan Altmeyer, J. Opt. Soc. Am. A, 33, (10), (2016), p. 2081
    https://doi.org/10.1364/JOSAA.33.002081
  • Refractive index determination of transparent samples by noniterative phase retrieval
    J. Frank, J. Matrisch, J. Horstmann, S. Altmeyer, G. Wernicke, Appl. Optics, 50, (4), (2011), p. 427
    https://doi.org/10.1364/AO.50.000427
  • Non-interferometric, non-iterative phase retrieval by Green's functions
    J. Frank, S. Altmeyer, G. Wernicke, J. Opt. Soc. Am. A, 27, (10) (2010), p. 2244
    https://doi.org/10.1364/JOSAA.27.002244
  • Observation of gelation process and particle distribution during sol-gel synthesis by Particle Image Velocimetry
    J. Krause, S. Lisinski, L. Ratke, D. Schaniel, C. Willert, S. Altmeyer, Th. Woike, M. Voges, J. Klinner, J. Sol-Gel Sci. Technol, 45 (2008), p. 73
    https://link.springer.com/content/pdf/10.1007/s10971-007-1624-9.pdf
  • Innovationen durch Femtosekunden-Laser
    S. Altmeyer, H. Eickenbusch, Physikalische Blätter 56 (6) (2000), p. 59
    https://doi.org/10.1002/phbl.20000560613
  • Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown material
    T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B. Spangenberg, H. Kurz, R. Neumann, K. Brunner, and G. Abstreiter, Japanese Journal of Applied Physics 38 part 1 (1B), (1999), p. 465
    https://iopscience.iop.org/article/10.1143/JJAP.38.465/pdf
  • Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films
    T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B.Spangenberg, H. Kurz, R. Neumann, K. Brunner and G. Abstreiter, Journal of Vacuum Science and Technology B 16 (6), (1998), p. 3804
    https://doi.org/10.1116/1.590412
  • Fabrication of Silicon and Metal Nanowires and Dots Using Atomic Force Lithography
    S. Hu, A. Hamidi, S. Altmeyer, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (5), (1998), p. 2822
    https://doi.org/10.1116/1.590277
  • Potential and Challenges of Single Electron Devices
    S. Altmeyer, K. Hofmann, A. Hamidi, S. Hu, B. Spangenberg, and H. Kurz, Vacuum 51 (2), (1998), p. 295
    https://doi.org/10.1016/S0042-207X(98)00178-X
  • Novel Approach to Atomic Force Lithography
    S. Hu, S. Altmeyer, A. Hamidi, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (4), (1998), p. 1983
    https://doi.org/10.1116/1.590117
  • On the influence of rare earth doping on microstructure and phase composition of sputtered, epitaxial Bi_2 Sr_2 [ Ca_(x-1) RE_x ] Cu_2 O_(8+d) films and multilayers
    A.C. Meltzow, S. Altmeyer and H. Kurz, N.D. Zakharov, S. Senz and D. Hesse, Physica C 302, (1998), p. 207
    https://doi.org/10.1016/S0921-4534(98)00186-5
  • MOS-Compatible Fabrication and Characterization of Tunnel Junctions in BESOI Material
    T. Köster, B. Hadam, F. Goldschmidtböing, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Microelectronic Engineering 41/42 (ix-xix), (1998), p. 531
    https://doi.org/10.1016/S0167-9317(98)00124-5
  • Metal-oxide-semiconductor compatible silicon based single electron transistor using bonded and etched back silicon on insulator material
    T. Köster, B. Hadam, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 15 (6), (1997), p. 2836
    https://doi.org/10.1116/1.589739
  • 77 K Single-Electron Transistors Fabricated with 0.1 mum Technology
    S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Applied Physics (Communications), 81 (12), (1997), p. 8818
    https://doi.org/10.1063/1.365374
  • Metal-Based Single-Electron Transistors Operating at Several Kelvin
    S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 14 (6), (1996), p. 4034
    https://doi.org/10.1116/1.588638
  • A Possible Road to 77 K Single-Electron Devices
    S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Semiconductor Science and Technology 11, (1996), p. 1502
    https://iopscience.iop.org/article/10.1088/0268-1242/11/11S/008/pdf
  • Step Edge Cut Off - A New Fabrication Scheme for Metal-Based Single-Electron Devices
    S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Microelectronic Engineering 30 (1-4), (1996), p. 399
    https://doi.org/10.1016/0167-9317(95)00272-3
  • A New Concept for the Design and Realization of Metal-Based Single-Electron Devices, Step Edge Cut Off
    S. Altmeyer, B. Spangenberg, and H. Kurz, Applied Physics Letters 67 (4), (1995), p. 569
    https://doi.org/10.1063/1.115172
  • Verbundscheibe für ein holografisches Head-Up-Display
    A. Gomer, J. Hagen, D. Krekel, S. Altmeyer, WO 2021 / 233713
  • Volumenhologramm zur Lichtlenkung und Verfahren zu dessen Herstellung
    S. Altmeyer, DE10 2015 007 770
  • Verfahren zur Herstellung eines Hologramms
    S. Altmeyer, R. Hammoud, J. Matrisch, DE10 2014 017 562
  • Anzeigeeinrichtung, transparentes Abbildungselement sowie Verfahren zur Herstellung eines transparenten Abbildungselementes
    S. Altmeyer, G. Abbati, S. Zozgornik, S. Henze, WO 2010 / 026032
  • Verschattungselement sowie Verfahren zu dessen Herstellung
    S. Altmeyer, S. Mebben, S. Zozgornik, DE 10 2006 050 119
  • SECO Verfahren
    S. Altmeyer, B. Spangenberg und H. Kurz, WO 96 / 16448
  • Rotating optical flat for simultaneous holographic multiplexing
    Jan Matrisch, Stefan Altmeyer, Proceedings der 118. Jahrestagung der DGAO 2017
    https://www.dgao-proceedings.de/download/118/118_p16.pdf
  • Multiplexing of transmission holograms in photopolymer
    S. Altmeyer, Y. Hu, P. Thiee, J. Matrisch, M. Wallentin and J. Silbermann, Proceedings der 114. Jahrestagung der DGAO 2013
    https://www.dgao-proceedings.de/download/114/114_b9.pdf
  • Quantitative determination of the optical properties of phase objects by using a real-time phase retrieval technique
    J. Frank, G.Wernicke, J. Matrisch, S.Wette, J. Beneke and S. Altmeyer, Proc. SPIE 8082, 80820N (2011), Publisher: SPIE
    https://www.spiedigitallibrary.org/conference-proceedings-of-spie/8082/1/Quantitative-determination-of-the-optical-properties-of-phase-objects-by/10.1117/12.889340.short?SSO=1
  • Quantitative Phasenrekonstruktion in Echtzeit unter Verwendung der Intensitats-Transport-Gleichung
    J. Frank, J. Matrisch, J. Beneke, S. Wette, S. Altmeyer und G. Wernicke, Proceedings der 112. Jahrestagung der DGAO 2011
    https://www.dgao-proceedings.de/download/112/112_p53.pdf
  • GPU-based Real-time Phase Microscopy
    J. Frank, S.Wette, J. Beneke and S. Altmeyer, OSA Technical Digest (CD) (Optical Society of America, 2011), paper NTuB5, Publisher: Proc. SPIE 8082, 80820N (2011)
    https://opg.optica.org/viewmedia.cfm?uri=NTM-2011-NTuB5&seq=0
  • Polarization-independent isolation of high power laser radiation
    M. Daniels, K. Nicklaus, H.-D. Hoffmann, S. Altmeyer, Proceedings of the Third International WLT-Conference on Lasers in Manufacturing 2005, p.747, Publisher: Eckhard Beyer
    https://d-nb.info/978768493/04
  • Single Electron Tunneling in Metallic Nanostructures at Kelvin Temperatures
    S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Quantum Devices and Circuits, Imperial College Press, (1996), p.~160, Publisher: ed. K.~Ismail, S.~Bandyopadhyay, and J.~P.~Leburton
    https://doi.org/10.1142/9781783263479

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