Prof. Dr. Stefan Altmeyer
Faculty of Information, Media and Electrical Engineering
Institute of Applied Optics and Electronics
Campus Deutz
Betzdorfer Straße 2
50679 Köln
Room ZW-09-09
Mailing address
- +49 221-8275-2523
- stefan.altmeyer@th-koeln.de
Positions
- Lab supervisor
- Vice Dean
- Member of the Senate
Publications
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Functional Design Analysis of Two Current Extended-Depth-of-Focus Intraocular Lensesttps://doi.org/10.1167/tvst.13.8.33
Damian Mendroch, Uwe Oberheide, Stefan Altmeyer, 21.08.2024, Publisher: translational vision science & technology, 13, (8), (2024)
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Characterization of diffractive bifocal intraocular lenseshttps://www.nature.com/articles/s41598-023-27521-7
Damian Mendroch, Stefan Altmeyer and Uwe Oberheide, Springer Nature, Scientific Reports 13 (908), (2023)
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Purely spectrometric method to measure the bias refractive index including its dispersion and the swelling or shrinking of holographic materialshttps://doi.org/10.1364/JOSAB.443976
S. Altmeyer, J. Matrisch, N. Bauer, and M. Frensch,, J. Opt. Soc. Am. B, 39, (2), (2022), p. 444
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Mechano-optical modulator based on a rotating optical at applied to simultaneous holographic multiplexing of gratingshttps://doi.org/10.1364/AO.57.000334
Jan Matrisch, Stefan Altmeyer, Appl. Optics, 57, (2), (2018), p. 334
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Fringe visibility degeneration utilizing a rotating optical at for holographic multiplexing purposeshttps://doi.org/10.1364/JOSAA.33.002081
Jan Matrisch, Johannes Seela, Stefan Altmeyer, J. Opt. Soc. Am. A, 33, (10), (2016), p. 2081
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Refractive index determination of transparent samples by noniterative phase retrievalhttps://doi.org/10.1364/AO.50.000427
J. Frank, J. Matrisch, J. Horstmann, S. Altmeyer, G. Wernicke, Appl. Optics, 50, (4), (2011), p. 427
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Non-interferometric, non-iterative phase retrieval by Green's functionshttps://doi.org/10.1364/JOSAA.27.002244
J. Frank, S. Altmeyer, G. Wernicke, J. Opt. Soc. Am. A, 27, (10) (2010), p. 2244
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Observation of gelation process and particle distribution during sol-gel synthesis by Particle Image Velocimetryhttps://link.springer.com/content/pdf/10.1007/s10971-007-1624-9.pdf
J. Krause, S. Lisinski, L. Ratke, D. Schaniel, C. Willert, S. Altmeyer, Th. Woike, M. Voges, J. Klinner, J. Sol-Gel Sci. Technol, 45 (2008), p. 73
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Innovationen durch Femtosekunden-Laserhttps://doi.org/10.1002/phbl.20000560613
S. Altmeyer, H. Eickenbusch, Physikalische Blätter 56 (6) (2000), p. 59
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Coulomb blockade effects in a highly doped silicon quantum wire fabricated on novel molecular beam epitaxy grown materialhttps://iopscience.iop.org/article/10.1143/JJAP.38.465/pdf
T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B. Spangenberg, H. Kurz, R. Neumann, K. Brunner, and G. Abstreiter, Japanese Journal of Applied Physics 38 part 1 (1B), (1999), p. 465
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Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon filmshttps://doi.org/10.1116/1.590412
T. Koester, F. Goldschmidtboeing, B. Hadam, J. Stein, S. Altmeyer, B.Spangenberg, H. Kurz, R. Neumann, K. Brunner and G. Abstreiter, Journal of Vacuum Science and Technology B 16 (6), (1998), p. 3804
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Fabrication of Silicon and Metal Nanowires and Dots Using Atomic Force Lithographyhttps://doi.org/10.1116/1.590277
S. Hu, A. Hamidi, S. Altmeyer, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (5), (1998), p. 2822
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Potential and Challenges of Single Electron Deviceshttps://doi.org/10.1016/S0042-207X(98)00178-X
S. Altmeyer, K. Hofmann, A. Hamidi, S. Hu, B. Spangenberg, and H. Kurz, Vacuum 51 (2), (1998), p. 295
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Novel Approach to Atomic Force Lithographyhttps://doi.org/10.1116/1.590117
S. Hu, S. Altmeyer, A. Hamidi, T. Köster, K. Hofmann, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 16 (4), (1998), p. 1983
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On the influence of rare earth doping on microstructure and phase composition of sputtered, epitaxial Bi_2 Sr_2 [ Ca_(x-1) RE_x ] Cu_2 O_(8+d) films and multilayershttps://doi.org/10.1016/S0921-4534(98)00186-5
A.C. Meltzow, S. Altmeyer and H. Kurz, N.D. Zakharov, S. Senz and D. Hesse, Physica C 302, (1998), p. 207
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MOS-Compatible Fabrication and Characterization of Tunnel Junctions in BESOI Materialhttps://doi.org/10.1016/S0167-9317(98)00124-5
T. Köster, B. Hadam, F. Goldschmidtböing, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Microelectronic Engineering 41/42 (ix-xix), (1998), p. 531
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Metal-oxide-semiconductor compatible silicon based single electron transistor using bonded and etched back silicon on insulator materialhttps://doi.org/10.1116/1.589739
T. Köster, B. Hadam, K. Hofmann, J. Gondermann, J. Stein, S. Hu, S. Altmeyer, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 15 (6), (1997), p. 2836
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77 K Single-Electron Transistors Fabricated with 0.1 mum Technologyhttps://doi.org/10.1063/1.365374
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Applied Physics (Communications), 81 (12), (1997), p. 8818
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Metal-Based Single-Electron Transistors Operating at Several Kelvinhttps://doi.org/10.1116/1.588638
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Journal of Vacuum Science and Technology B 14 (6), (1996), p. 4034
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A Possible Road to 77 K Single-Electron Deviceshttps://iopscience.iop.org/article/10.1088/0268-1242/11/11S/008/pdf
S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Semiconductor Science and Technology 11, (1996), p. 1502
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Step Edge Cut Off - A New Fabrication Scheme for Metal-Based Single-Electron Deviceshttps://doi.org/10.1016/0167-9317(95)00272-3
S. Altmeyer, F. Kühnel, B. Spangenberg, and H. Kurz, Microelectronic Engineering 30 (1-4), (1996), p. 399
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A New Concept for the Design and Realization of Metal-Based Single-Electron Devices, Step Edge Cut Offhttps://doi.org/10.1063/1.115172
S. Altmeyer, B. Spangenberg, and H. Kurz, Applied Physics Letters 67 (4), (1995), p. 569
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Illuminable vehicle sunroof
Jean-Baptiste Lauderau, Berard Mathieu, Mimoun Emmanuel, Stefan Altmeyer, WO002024141529 A1
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Verbundscheibe für ein holografisches Head-Up-Display
A. Gomer, J. Hagen, D. Krekel, S. Altmeyer, WO 2021 / 233713
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Volumenhologramm zur Lichtlenkung und Verfahren zu dessen Herstellung
S. Altmeyer, DE10 2015 007 770
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Verfahren zur Herstellung eines Hologramms
S. Altmeyer, R. Hammoud, J. Matrisch, DE10 2014 017 562
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Anzeigeeinrichtung, transparentes Abbildungselement sowie Verfahren zur Herstellung eines transparenten Abbildungselementes
S. Altmeyer, G. Abbati, S. Zozgornik, S. Henze, WO 2010 / 026032
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Verschattungselement sowie Verfahren zu dessen Herstellung
S. Altmeyer, S. Mebben, S. Zozgornik, DE 10 2006 050 119
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SECO Verfahren
S. Altmeyer, B. Spangenberg und H. Kurz, WO 96 / 16448
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Rotating optical flat for simultaneous holographic multiplexinghttps://www.dgao-proceedings.de/download/118/118_p16.pdf
Jan Matrisch, Stefan Altmeyer, Proceedings der 118. Jahrestagung der DGAO 2017
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Multiplexing of transmission holograms in photopolymerhttps://www.dgao-proceedings.de/download/114/114_b9.pdf
S. Altmeyer, Y. Hu, P. Thiee, J. Matrisch, M. Wallentin and J. Silbermann, Proceedings der 114. Jahrestagung der DGAO 2013
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Quantitative determination of the optical properties of phase objects by using a real-time phase retrieval techniquehttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/8082/1/Quantitative-determination-of-the-optical-properties-of-phase-objects-by/10.1117/12.889340.short?SSO=1
J. Frank, G.Wernicke, J. Matrisch, S.Wette, J. Beneke and S. Altmeyer, Proc. SPIE 8082, 80820N (2011), Publisher: SPIE
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Quantitative Phasenrekonstruktion in Echtzeit unter Verwendung der Intensitats-Transport-Gleichunghttps://www.dgao-proceedings.de/download/112/112_p53.pdf
J. Frank, J. Matrisch, J. Beneke, S. Wette, S. Altmeyer und G. Wernicke, Proceedings der 112. Jahrestagung der DGAO 2011
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GPU-based Real-time Phase Microscopyhttps://opg.optica.org/viewmedia.cfm?uri=NTM-2011-NTuB5&seq=0
J. Frank, S.Wette, J. Beneke and S. Altmeyer, OSA Technical Digest (CD) (Optical Society of America, 2011), paper NTuB5, Publisher: Proc. SPIE 8082, 80820N (2011)
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Polarization-independent isolation of high power laser radiationhttps://d-nb.info/978768493/04
M. Daniels, K. Nicklaus, H.-D. Hoffmann, S. Altmeyer, Proceedings of the Third International WLT-Conference on Lasers in Manufacturing 2005, p.747, Publisher: Eckhard Beyer
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Single Electron Tunneling in Metallic Nanostructures at Kelvin Temperatureshttps://doi.org/10.1142/9781783263479
S. Altmeyer, A. Hamidi, B. Spangenberg, and H. Kurz, Quantum Devices and Circuits, Imperial College Press, (1996), p.~160, Publisher: ed. K.~Ismail, S.~Bandyopadhyay, and J.~P.~Leburton
Other information
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